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국내 논문지

홈 홈 > 연구문헌 > 국내 논문지 > 전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

Current Result Document : 8 / 23 이전건 이전건   다음건 다음건

한글제목(Korean Title) 고속 전원차단 회로 설계 제작 및 측정
영문제목(English Title) A Design of High-speed Power-off Circuit and Analysis
저자(Author) 정상훈   이남호   조성익   Sang-hun Jeong   Nam-ho Lee   Seong-ik Cho  
원문수록처(Citation) VOL 63 NO. 04 PP. 0490 ~ 0494 (2014. 04)
한글내용
(Korean Abstract)
영문내용
(English Abstract)
In this paper, a design of high-speed power-off circuit and analysis. The incidence of high-dose transient radiation into the silicon-based semiconductor element induces the photocurrent due to the creation of electron-hole pairs, which causes the upset phenomenon of active elements or triggers the parasitic thyristor in the element, resulting in latch-up. High speed power-off circuit was designed to prevent burn-out of electronic device caused by Latch-up. The proposed high speed power-off circuit was configured with the darlington transistor and photocoupler so that the power was interrupted and recovered without the need for an additional circuit, in order to improve the existing problem of SCR off when using the thyristor. The discharge speed of the high speed power interruption circuit was measured to be 19 ${ mu}s$ with 10 ${ mu}F$ and 500 ${ Omega}$ load, which was 98% shorter than before (12.8 ms).
키워드(Keyword) Power-off   Latch-up   Transient Radiation Effects (TRE)  
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