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학술대회 프로시딩

홈 홈 > 연구문헌 > 학술대회 프로시딩 > 대한전자공학회 학술대회 > 2020년 대한전자공학회 하계종합학술대회

2020년 대한전자공학회 하계종합학술대회

Current Result Document : 20 / 20

한글제목(Korean Title) 챔버의 산소 가스를 이용한 세정 조건의 압력 영향성 연구
영문제목(English Title) The influence of pressure at O2 In-situ dry cleaning process for mass production system
저자(Author) 한상범   김소영   Sang-Beom Han   SoYoung Kim  
원문수록처(Citation) VOL 43 NO. 01 PP. 0272 ~ 0273 (2020. 08)
한글내용
(Korean Abstract)
영문내용
(English Abstract)
In-situ dry cleaning is a process that eliminates native oxide as well as other contaminates after etch processes are carried out in the chamber. It is important to manage chamber conditions to control quality and productivity. Semiconductor processes are very sensitive and have become increasingly more difficult and time consuming while producing many carbon-based byproducts. These resulting byproducts will then affect the next process. The in-situ dry cleaning of O2 conditions is popularly used to clean chamber conditions in CCP chamber. However, if the pressure is very low level, the O2 in-situ dry cleaning will further contaminate the parts and surfaces in the chamber and react with the carbon compound that should have been removed. In this study, we study the effect of pressure on insitu dray cleaning.
키워드(Keyword)
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