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영문 논문지

홈 홈 > 연구문헌 > 영문 논문지 > JSTS (Journal of Semiconductor Technology and Science)

JSTS (Journal of Semiconductor Technology and Science)

Current Result Document : 3,897 / 3,897

한글제목(Korean Title) The Optimized Partial Insulator Isolation MOSFET(PiFET)
영문제목(English Title) The Optimized Partial Insulator Isolation MOSFET(PiFET)
저자(Author) Young Kwon Kim   Jin Sung Lee   Geon Kim   Taesik Par   Taesik Park   Hui Jung Kim   Young Pyo Cho   Young June Park   Myoung Jin Lee        
원문수록처(Citation) VOL 17 NO. 05 PP. 0729 ~ 0732 (2017. 10)
한글내용
(Korean Abstract)
영문내용
(English Abstract)
The proposed partial insulator isolation MOSFET (PiFET) structure, shows the characteristics of improved DIBL and high threshold voltage, using the optimized buried partial insulator shape with a small dielectric constant, compared with the conventional planar MOSFET and silicon on insulator (SOI) structures, even though it has the same doping profile.
키워드(Keyword) Drain-induced barrier lowering   DIBL   silicon-on-insulator   SOI   partial insulator isolation MOSFET   PiFET   buried oxide   BOX        
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